Berlin 2008 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 32: Postersession II: Spinstruct./Phase Trans. (1-10); Spinelectronics (11-15); Thin Films (16 - 36); Particles/Clusters (37-45); Multiferroics (46-54); Spindynamics/Spin Torque (55 - 76); Post Deadlines (77-79)
MA 32.29: Poster
Freitag, 29. Februar 2008, 11:15–14:00, Poster E
Effects of wet-chemical etching on MnAs/GaAs hybride structures probed by HX-PES — •Benjamin Schmid1, Sebastian Engelbrecht1, Michael Sing1, Jan Wenisch2, Charles Gould2, Karl Brunner2, Lorenz Molenkamp2, Wolfgang Drube3, and Ralph Claessen1 — 1Experimentelle Physik IV, Universität Würzburg, Würzburg, Germany — 2Experimentelle Physik III, Universität Würzburg, Würzburg, Germany — 3HASYLAB, DESY, Hamburg
Ferromagnet-semiconductor hybride structures represent a promising approach to spintronic applications. Utilizing not only the charge but also the spin degree of freedom would lead to a new generation of computing devices. One promising candidate for spin-injectors or aligners compatible with conventional semiconductors is MnAs. It provides a high Curie temperature of 317 K and a compatibility to GaAs. Moreover, thin films of MnAs can be grown epitaxially on GaAs by MBE with monolayer accuracy.
In order to fabricate tailor-made spintronic devices it is essential to test established surface preparation methods. Obtaining clean surfaces during the fabrication process of heterostructures by wet-chemical etching is a standard method in today’s semiconductor industry. We investigated the effects of etching with either HCl or H2SO4 on MnAs thin films using photoemission spectroscopy in the hard X-ray regime (HX-PES). HCl removes contaminations such as oxygen and carbon. After etching the surface appears to be covered with an As layer. In contrast, H2SO4 leads to a complete destruction of the MnAs thin film.