Berlin 2008 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 5: Spindependent Transportphenomena I
MA 5.5: Vortrag
Montag, 25. Februar 2008, 11:15–11:30, H 0112
Spin polarized tunneling into superconducting Al-Si and Al-Cu with MgO tunnel barrier — •Sarah Dierk1, Oliver Schebaum1, Andy Thomas1, Günter Reiss1, and Jagadeesh Moodera2 — 1Department of Physics, University of Bielefeld, D-33615 Bielefeld, Germany — 2Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge MA, USA
The determination of the tunneling spin polarization with superconducting tunnel junctions plays an important role in spintronics.
The tunneling spin polarization can be measured directly with a great accuracy [1]. Superconducting tunnel junctions with Al-Si and Al-Cu as superconductors have been prepared using two different shadow masks in a magnetron-sputter-deposition system. MgO has been used as the barrier material. The spin polarization of Co on top of the barrier was measured using the method of R. Meservey and P.M. Tedrow [1]. The results of annealed and not-annealed samples were compared, to determine the differences in cristallinity. The measurements were accomplished in an 3He/4He-cryostat at 0.46K and H=2.9T and H=3.31T. The spin-orbit scattering rates of Al-Si and Al-Cu have been compared in order to determine the influence of the higher atomic number of Cu on the spin-orbit-scattering.
[1] R. Meservey, P.M. Tedrow, Phys. Rep. 238, No. 4 (1994), 173-243.