Berlin 2008 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 26: Liquid and Amorphous Metals I
MM 26.1: Vortrag
Mittwoch, 27. Februar 2008, 14:00–14:15, H 0107
Diffusion of Nickel atoms in liquid Silicon — •Anja Ines Pommrich1, Andreas Meyer1, Dirk Holland-Moritz1, and Tobias Unruh2 — 1Institut für Materialphysik im Weltraum, DLR, Köln — 2Forschungsneutronenquelle Heinz Maier-Leibnitz (FRMII), Garching
For the production of Silicon wafers for solar cell applications the knowledge of impurity diffusion of metal atoms in liquid Silicon is necessary to describe the directional solidification process. We measured the Nickel diffusion in liquid Silicon by quasielastic neutron scattering on the TOFTOF-spectrometer of the FRMII in Munich. Electromagnetic levitation was used for container-less processing. This allows diffusion measurements not only in the equilibrium melt but also in the undercooled melt with temperatures up to 280 K below the melting point.
First results show a fast Nickel diffusion as compared to other alloy systems. Furthermore the Nickel self-diffusion coefficients exhibit within error bars no concentration dependence in the range of 5 at% to 20 at% of Nickel and an Arrhenius type temperature dependence.