Berlin 2008 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 38: Nanostructured Materials V
MM 38.4: Vortrag
Donnerstag, 28. Februar 2008, 12:30–12:45, H 0111
Reactive diffusion under elastic stress in nanospheres — •Constantin Buzau Ene1, Guido Schmitz2, Carsten Nowak1, Talaat Al-Kassab1, and Reiner Kirchheim1 — 1Universität Göttingen, Institut für Materialphysik, Friedrich-Hund Platz 1, D-37077 Göttingen — 2Universität Münster, Institut für Materialphysik, Wilhelm-Klemm-Str.10, D-48149 Münster
A remarkably clear experiment has been designed in order to investigate the influence of stress on reactive diffusion in spherical symmetry. Thin film Al/Cu/Al and Cu/Al/Cu triple layers with approximately 10 nm single layer thickness are deposited on curved substrates of 25 nm radius and investigated by atom probe tomography. The experiments demonstrate that the reaction rate depends significantly on the deposition sequence of the metals. The thickness of the product formed at the interfaces at which Cu is deposited on top of Al is approximately 1.5 to 2 times thicker than that of the opposite stacking sequence. This observation may be explained naturally by Laplace tension of the curved interfaces. By quantitative analysis, the level of induced stress can be determined from the modified growth rates.