Berlin 2008 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 43: Phase Transitions IV
MM 43.3: Vortrag
Donnerstag, 28. Februar 2008, 16:30–16:45, H 0107
Genuine Metal-Insulator Transition of V2O3 Revealed by Hard X-ray Photoemission — •Hidenori Fujiwara1,2, Akira Sekiyama1, Junnichi Yamaguchi1, Gen Funabashi1, Shin Imada1, Sung-Kwan Mo3,4, James W. Allen3, Patricia Metcalf5, Atsushi Higashiya6, Makina Yabashi7, Kenji Tamasaku6, Tetsuya Ishikawa6,7, and Shigemasa Suga1 — 1Graduate School of Engineering Science, Osaka University, Toyonaka, Japan — 2II. Physikalisches Institut, Universität zu Köln, Köln, Germany — 3Randall Laboratory of Physics, University of Michigan, Ann Arbor, USA — 4Department of Physics, Stanford University, Stanford, USA — 5Department of Physics, Purdue University, West Lafayette, USA — 6SPring-8/RIKEN, Sayo, Japan — 7SPring-8/JASRI, Sayo, Japan
V2O3 is a paradigmatic example of Mott-Hubbard (MH) metal-insulator transition (MIT) materials; it displays the 1st-order transition from the paramagnetic metal (PM) to the antiferromagnetic insulator (AFI) at 150 K. In order to reveal the mechanism of the Mott-Hubbard metal-insulator transition (MH-MIT) in V2O3, we have performed the hard X-ray photoemission (HAXPES) with hν = 8170 eV at BL19LXU in SPring-8. The energy resolution was set to 130 meV. The clean surface of the single crystalline sample was obtained by cleavage in situ in ultra-high vacuum. The significant spectral transfer of the V 3d states is observed through the MH-MIT. We reveal the simple Mott-Hubbard scenario does not describe the transition, and new reliable model is required to explain"the MH-MIT on V2O3.