Berlin 2008 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 10: Semiconductor Substrates: Epitaxy and Growth
O 10.4: Vortrag
Montag, 25. Februar 2008, 14:00–14:15, MA 042
Photoelectron spectroscopy (XPS) studies on the system zirconium oxide on Si(100) — •Frank Schönbohm1,2, Christian Flüchter1,2, Daniel Weier1, Sven Döring1,2, Patrick Mehring1, Ulf Berges1,2, and Carsten Westphal1,2 — 1Fakultät Physik - Technische Universität Dortmund, Otto-Hahn-Str. 4, 44221 Dortmund, Germany — 2DELTA - Technische Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, 44227 Dortmund, Germany
Because of the importance for industrial manufacturing we studied ultrathin ZrO2 films on a Si(100)(2×1) reconstructed surface. We carried out XPS measurements of the Si 2p- and the Zr 3d-level and calculated the film thickness by the damping of the signal strength. Further XPS investigations were performed in order to examine the systems heat stability. The thermal behavior was investigated by annealing the sample at temperatures ranging from 500∘C up to 750∘C. A ZrO2 film thickness of 11 Å on the Si(100)surface was thermally stable for temperatures up to 600∘C. Above this temperature a new compound was found in the XPS spectra, chemically shifted by 3.7 eV. For temperatures higher than 750∘C the ZrO2-signal disappeared completely from the surface and the structure of the new ZrSi2 compound was then examined by a combined LEED, SEM and XPD investigation. The experiments indicated that ZrSi2 forms islands on the surface. The experimental diffraction data were compared to simulations resulting in a first structure model of the islands.