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Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 10: Semiconductor Substrates: Epitaxy and Growth

Monday, February 25, 2008, 13:15–16:45, MA 042

13:15 O 10.1 Thickness-dependent structural investigation of thin GaN films by Photoelectron Diffraction — •Christoph Raisch, Alexey Sidorenko, Heiko Peisert, and Thomas Chassé
13:30 O 10.2 Morphological and chemical characterization of thin heteroepitaxial Praseodymium sesquioxide films on Si(111) — •Andreas Schaefer, Volkmar Zielasek, Thomas Schmidt, Anders Sandell, Joachim Wollschläger, Jens Falta, and Marcus Bäumer
13:45 O 10.3 Combined electrical and chemical characterization of BaO thin films on Si(001) — •Dirk Müeller-Sajak, Alexandr Cosceev, Herbert Pfnür, and Karl R. Hofmann
14:00 O 10.4 Photoelectron spectroscopy (XPS) studies on the system zirconium oxide on Si(100) — •Frank Schönbohm, Christian Flüchter, Daniel Weier, Sven Döring, Patrick Mehring, Ulf Berges, and Carsten Westphal
14:15 O 10.5 The Influence of Carbon Contaminations in Silicon Epitaxy — •Oliver Senftleben, Peter Iskra, Tanja Stimpel-Lindner, Dorota Kulaga-Egger, Ignaz Eisele, and Hermann Baumgärtner
14:30 O 10.6 Influence of an Ehrlich-Schwoebel barrier on growth oscillations during epitaxy in layer-by-layer mode — •Christian Heyn
14:45 O 10.7 Investigation of a long-ranged ordered silicate adlayer on the 6H-SiC(0001) surface by LEED, AES and IPE — •Nabi Aghdassi, Ralf Ostendorf, and Helmut Zacharias
15:00 O 10.8 Optimized hydrogen bake as in-situ removal of residual oxide and carbon on silicon substrates for thin film deposition — •Thomas Zilbauer, Peter Iskra, Dorota Kulaga-Egger, Martin Schlosser, Helmut Lochner, Torsten Sulima, and Ignaz Eisele
15:15 O 10.9 Impurity induced growth instabilities — •Jörg Megow and Frank Grosse
15:30 O 10.10 Strain Induced Pit Formation in Ge Layers on Si(111) — •Konstantin Romanyuk, Vasily Cherepanov, Bert Voigtländer, and Jacek Brona
15:45 O 10.11 Growth and arrangement of silicon and germanium nanowhiskers — •Andrea Kramer
16:00 O 10.12 Structure and morphology of graphene layers on SiC(0001) — •Christian Riedl, Chariya Virojanadara, Christian Ast, Alexei Zakharov, Klaus Heinz, and Ulrich Starke
16:15 O 10.13 Spatial variation of the Dirac-gap in epitaxial graphene — •Lucia Vitali, Christian Riedl, Robin Ohmann, Ulrich Starke, and Klaus Kern
16:30 O 10.14 Graphene band structure near the Dirac point - lifting of the degeneracy ?Eli Rotenberg, Aaron Bostwick, Taisuke Ohta, Jessica McChesney, Thomas Seyller, and •Karsten Horn
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