Berlin 2008 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 30: Phenomena at Semiconductor Surfaces
O 30.2: Vortrag
Dienstag, 26. Februar 2008, 12:15–12:30, MA 041
Cyclopentene (C5H8) on InP(001)(2x4): adsorption structure — •R. Passmann1,2, P. Favero3, T. Bruhn1,2, W. Braun4, W. G. Schmidt5, M. Kneissl1, W. Richter6, N. Esser1,2, and P. Vogt1 — 1TU Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — 2ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany — 3Instituto de Física da Universidade de Brasília, Brazil — 4BESSY GmbH, Albert-Einstein-Str. 15, 12489 Berlin, Germany — 5Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany — 6Universita Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy
In this study we report on the modification of the InP(001)(2x4) surface upon C5H8 exposure, observed by reflectance anisotropy spectroscopy (RAS), synchrotron based PES (SXPS) and LEED. The samples were prepared in ultra high vacuum and the reconstruction formation was controlled by LEED and RAS. The characteristic features at 1.8 eV in the RAS spectra related to the InP(2x4) surface is reduced during the deposition of the molecules and shifted towards higher photon energies. SXPS measurements of the C1s, In4d and P2p core level confirm a covalent bonding of the C5H8 molecules to the top In-P mixed dimer. The molecules can be desorbed at 400°C and the (2x4) reconstruction can be restored. The comparison to DFT total energy calculations supports an interaction between C5H8 and the top-layer dangling bonds. From these results a structural model for the absorption of C5H8 on the InP(2x4) surface is proposed.