Berlin 2008 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 4: Nanostructures at Surfaces

O 4.4: Vortrag

Montag, 25. Februar 2008, 12:00–12:15, MA 042

Effect of HF concentration on physical and electronic properties of electrochemical formed nano-porous silicon — •Pushpendra Kumar¹, Manash Ghosh¹, Hongdan Yan¹, Frank Ludwig², Meinhard Schilling², and Peter Lemmens¹ — ¹IPKM, TU-Braunschweig — ²EMG, TU-Braunschweig

We report on the preparation and functionalization of porous silicon (PS) using electrochemical etching in hydrofluoric (HF) acid based solutions. The properties of PS such as thickness of the porous layer, porosity and average pore diameter are precisely controlled and characterized using optical absorption, nitrogen sorption isotherms, field emission SEM, Raman and PL spectroscopy. Functionalization was performed by oxidizing and subsequent doping with different dyes and magnetic molecules.