Berlin 2008 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 88: Metallic Nanostructures II (on Semiconductors)

O 88.12: Vortrag

Freitag, 29. Februar 2008, 12:15–12:30, MA 005

Analysis of damascene-fabricated Cu lines by electron backscatter diffraction and X-ray diffraction — •Anastasia Moskvinova, Steffen Schulze, Michael Hietschold, Ramona Ecke, Ina Schubert, and Stefan E. Schulz — Solid Surface Analysis Group and Center for Microtechnologies, Chemnitz University of Technology, 09107 Chemnitz, Germany

Electroplated copper has become the method of choice for filling narrow interconnect features for microelectronics applications in one processing step. However, as the trench width decreases, the influence of the physical-vapour deposited (PVD) seed layer becomes more important. Due to changes in the growth dynamics the volume fraction of the PVD copper rises significantly compared with the ECD copper. Therefore we focused our interest on understanding the grain growth mechanism in thin PVD copper films and its differences from the growth dynamics in ECD copper structures and films. For that reason we analyzed the grain size and crystallographic orientation by electron backscatter diffraction (EBSD) and X-ray diffraction. Both techniques indicate a strong (111) texture. The grain structure of the Cu line in the trenches may differ considerably from that of blanket films. Grain size of copper within the trenches is affected by size constraints Cu. In narrow lines we find more small grains than in wider lines, suggesting that the grain structure depends on the line geometry.