Berlin 2008 – wissenschaftliches Programm
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SYSA: Symposium Tayloring Organic Interfaces: Molecular Structures and Applications
SYSA 5: Poster Session SYSA
SYSA 5.45: Poster
Dienstag, 26. Februar 2008, 14:30–20:00, Poster A
Contact resistance effects of P3HT field-effect transistors produced by Maskless Mesoscale Material Deposition (M3D) — •D. Belaineh1, B. Gburek1, V. Zöllmer2, V. Ruttkowski2, M. Busse2, and V. Wagner1 — 1Jacobs University Bremen, School of Engineering and Science, Campus Ring 8, 28759 Bremen, Germany — 2Fraunhofer Institut für Fertigungstechnik und angewandte Materialforschung (IFAM), Wiener Straße 12, 28359 Bremen, Germany
In search for improved contact properties of organic field-effect transistors (OFETs), conventional lithographic patterning of the source and drain electrodes is compared to manufacturing by the M3D technique. M3D is a direct-write method used for depositing silver particles as source and drain electrodes on Si/SiO2 substrates from an aerosolized functional ink. This method yields electrodes with a very rough surface structure which should give rise to very high local fields. The contact properties were determined by the transmission line method, i.e. by analyzing the channel conductance in dependence of the channel length L=10 to 50 μm. The results are compared to those from OFETs with smooth silver electrodes prepared by optical lithography, where the silver layer was either deposited by e-beam metallization or by sputtering. The investigations show that M3D allows to produce samples with similar contact properties as by using lithographic techniques. However, ongoing improvements of deposition process are expected to yield superior contact properties. Especially due to fast and gentle processing of the electrodes M3D is an interesting alternative of electrode structuring with potential for improved injection properties.