Berlin 2008 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 14: Transport: Nanoelectronics III - Molecular Electronics
TT 14.6: Vortrag
Dienstag, 26. Februar 2008, 10:45–11:00, H 3010
Silicon based nanogap devices for transport studies on molecule-nanoparticle junctions — •Sebastian Strobel1, Rocio Murcia1, Allan Hansen2, and Marc Tornow2 — 1Walter Schottky Institut, TU München, Germany — 2Institut für Halbleitertechnik, TU Braunschweig, Germany
One possible realization of future nanoelectronics may be a hybrid combination of existing silicon circuitry with functional molecular units. Such approach requires a silicon based technology that allows for the parallel fabrication of contact structures for molecules, as well as the fundamental characterization of such hybrids.
We have fabricated arrays of individually addressable nanogap electrodes with a predefined separation down to ~20 nm using silicon on insulator (SOI) as substrate material. The samples were processed using standard optical lithography, dry and wet chemical etching, and metal thin film deposition, only.
We realized hybrid molecular junctions using such nanogap electrode devices by self-assembling a monolayer of mercaptohexanol onto the metal contacts, and trapping 30 nm diameter Au nanoparticles between the functionalized electrodes, subsequently. Transport measurements at 4.2 K revealed pronounced Coulomb staircase behaviour, characteristic for asymmetric double-barrier tunnelling junctions. We analyse our data by means of model calculations.