Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 22: Transport: Poster Session
TT 22.46: Poster
Mittwoch, 27. Februar 2008, 14:00–18:00, Poster B
Electronic Transport Measurements on Mass-Selected Silicon Clusters — •Jochen Grebing, Rainer Dietsche, Gerd Ganteför, and Elke Scheer — Dept. of Physics, University of Konstanz
We present electronic transport measurements on mass-selected silicon clusters, in particular Si4 which are supposed to be magic [1].
These clusters are being created using a magnetron sputter source. After mass separation they are soft-landed onto adjustable metallic electrodes fabricated with a MCB technique [2]. Following the deposition a single or a few clusters may be contacted, and their transport properties are being investigated in situ by recording conductance histograms and current voltage curves.
The histograms show significant changes in their characteristics after deposition of ≈ 0.1ML of Si4 clusters. To further investigate whether transport occured through single or few clusters IV-curves have been measured. Calculations predict nonlinearities for a bias 0.25V for Si4 contacted with Au leads [3].
[1] M. Grass et al., Appl. Phys. Lett 81, 3810 (2002)
[2] MCB: Mechanically Controllable Breakjunction
[3] C. Roland et al., Phys. Rev. B 66, 035332 (2002)