Dresden 2009 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 13: Thin Films and Nanostructures I

DF 13.4: Vortrag

Mittwoch, 25. März 2009, 15:40–16:00, WIL B321

Electrical characterization of ferroelectric tunnel junctions with ferromagnetic electrodes — •Mario Disch¹, Adrian Petraru¹, Michael Hambe², Markus Heidelmann¹, Martina Luysberg¹, Falk Amthor¹, Rainer Waser¹, Nagarajan Valanoor², and Hermann Kohlstedt¹ — ¹Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, Jülich, Germany — ²School of Materials Science and Engineering, University of New South Wales, Sydney, Australia

Heterostructures of SrTiO₃(substrate)/SrRuO₃/BaTiO₃/SrRuO₃ and NdGaO₃(substrate)/LaSr_0.67Mn_0.33O₃/PbZr_0.2Ti_0.8O₃/LaSr_0.67Mn_0.33O₃ were grown by high pressure sputtering and pulsed laser deposition respectively. The BaTiO₃ was deposited as wedge-like films. The thickness gradient was determined by transmission electron microscopy and ranged from approximately 1.5 to 3.5 nm. X-ray diffraction indicated epitaxial and fully strained heterostructures. Tunnel junctions and ferroelectric capacitors were fabricated using optical lithography and ion beam etching. The ferroelectric capacitors showed displacement current down to a thickness of about 2 nm of the BaTiO₃. Current transport and tunnel magneto resistance were performed down to 10 K and the results will be discussed in the framework of the magneto electric interface effect.