DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2009 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DF: Fachverband Dielektrische Festkörper

DF 5: High-k and low-k Dielectrics

Montag, 23. März 2009, 15:00–17:00, WIL B321

15:00 DF 5.1 Dielectric properties of A2/3Cu3Ti4O12 (A = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy) — •Jürgen Sebald, Stephan Krohns, Peter Lunkenheimer, Stefan Riegg, Stefan G. Ebbinghaus, and Alois Loidl
15:20 DF 5.2 Characterization of (SrO)x(ZrO2)(1−x) thin films for use in metal insulator metal capacitors — •Matthias Grube, Oliver Bierwagen, Dominik Martin, Lutz Geelhaar, and Henning Riechert
15:40 DF 5.3 Ternary rare-earth based alternative gate-dielectrics for future integration in MOSFETs — •Jürgen Schubert, Joao Marcelo Lopes, Eylem Durgun Özben, Roman Luptak, Steffi Lenk, Willi Zander, and Martin Roeckerath
16:00 DF 5.4 The deposition of rare-earth oxide ultrathin-films with inorganic precursors — •Maraike Ahlf, Hanno schnars, Oliver Skibitzki, Marvin Zöllner, Katharina Al-Shamery, Mareike Ahlers, and Mathias Wickleder
16:20 DF 5.5 High performance MIM capacitors with Atomic Vapour Deposited HfO2 dielectrics — •Mindaugas Lukosius, Christian Wenger, Christian Walczyk, and Hans-Joachim Müssig
16:40 DF 5.6 Growth investigation of thin Ti-based high-k films — •Andreas Krause, Dominik Martin, Matthias Grube, and Walter M. Weber
100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2009 > Dresden