Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DF: Fachverband Dielektrische Festkörper
DF 5: High-k and low-k Dielectrics
DF 5.2: Vortrag
Montag, 23. März 2009, 15:20–15:40, WIL B321
Characterization of (SrO)x(ZrO2)(1−x) thin films for use in metal insulator metal capacitors — •Matthias Grube1, Oliver Bierwagen2, Dominik Martin1, Lutz Geelhaar3, and Henning Riechert3 — 1Namlab GmbH, 01187 Dresden — 2University of California, Santa Barbara 93106 CA, USA — 3Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin
(SrO)x(ZrO2)(1−x) is a promising candidate as high-k dielectric for metal-insulator-metal capacitors of future memory cells. The dielectrics were grown by co-evaporating SrO from a high temperature effusion cell and ZrO2 from an electron beam evaporator in a molecular beam deposition chamber. As substrates, n++-Si-wafers were used that were covered with a pre-deposited 5 nm-thin TiN layer. In order to reveal the correlation between process conditions and film properties, especially high-k values and leakage currents, a series of samples with different thicknesses ranging form 10 to 40 nm were fabricated while the growth temperature was varied from 100∘C to 800∘C. X-ray fluorescence analysis (XFA) and X-ray reflectometry (XRR) were employed to determine the thickness and the stoichiometry of the films, while the electrical properties of the dielectrics were determined through current-voltage and capacitance-voltage measurements before and after a post deposition anneal.