Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 11: Layer Growth: Evolution of Structure and Simulation

DS 11.5: Vortrag

Dienstag, 24. März 2009, 15:00–15:15, GER 37

Evolution of the interfacial layer during the atomic layer deposition of HfO2 on Si/SiO2 substrates — •Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser — Brandenburgische Technische Universität, LS Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee, 17, 03046, Cottbus, Germany

We studied the formation of the interfacial layer in the Si/SiO2/HfO2 system using the in-situ Atomic Layer Deposition (ALD) reactor developed in our group [1,2]. We measured the X-ray photoelectron and X-ray absorption spectra with synchrotron radiation at the beamline U49-2/PGM2-BESSY II. The ALD growth was obtained using different Hf-precursors (HfCl4,TEMAHf and TDMAHf) on various prepared substrates at different temperatures. The investigation was carried out in-situ giving the possibility to determine the properties of the grown film after every ALD cycle without breaking the vacuum. We observed the evolution of the Si/SiO2/HfO2 system during the formation of first three Hf-oxide layers, detecting the interfacial growth of SiO2 during the initial ALD cycles from the XPS spectra of Si2p. We discuss how the interfacial layer growth depends on the various ALD parameters.
[1] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Appl. Phys. 104, 064116 (2008); [2] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Vac. Sci. Technol. B, accepted for publication.

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