Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 1: III-V semiconductors I

HL 1.1: Vortrag

Montag, 23. März 2009, 10:15–10:30, BEY 81

Epitaxy of self-assembled quantum dots on AlGaInAs lattice matched to InP for long wavelength emission using molecular beam epitaxy — •Mario Bareiß, Roland Enzmann, Marion Kraus, Daniela Baierl, Gerhard Böhm, Ralf Meyer, Jonathan Finley, and Markus-Christian Amann — Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany

We present the formation of InAs quantum dots with a low surface density on AlGaInAs lattice matched to InP(001) substrates using molecular beam epitaxy. Usually the deposition of self assembled quantum structures on InP results in the form of elongated quantum dashes. Only within a narrow regime of growth parameters the formation of circular shaped quantum dots is favoured as our study shows. Aiming for a low quantum dot density requires a high migration length of the Indium atoms. Therefore we used low growth rates down to 0.003 monolayers per second. To tailor furthermore the emission wavelength of the quantum dots to 1.5 micrometers the Aluminium to Gallium ratio in the barrier material was adjusted. Achieving very low quantum dot densities of approximatly one per square micrometer makes these quantum dots promising candidates for single photon generation in the telecommunication regime.