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10:15 |
HL 1.1 |
Epitaxy of self-assembled quantum dots on AlGaInAs lattice matched to InP for long wavelength emission using molecular beam epitaxy — •Mario Bareiß, Roland Enzmann, Marion Kraus, Daniela Baierl, Gerhard Böhm, Ralf Meyer, Jonathan Finley, and Markus-Christian Amann
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10:30 |
HL 1.2 |
Minority carrier lifetime of MOCVD grown InGaAsP and InGaAs absorbers for low bandgap tandem solar cells — •Nadine Szabo, Erol Sagol, Marinus Kunst, Klaus Schwarzburg, and Thomas Hannappel
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10:45 |
HL 1.3 |
Investigation of the Bir-Aronov-Pikus spin relaxation mechanism in (110) GaAs quantum wells — •Stefan Oertel, Jens Hübner, Dieter Schuh, Werner Wegscheider, and Michael Oestreich
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11:00 |
HL 1.4 |
Intrinsic Spin Lifetimes in GaAs (110) Quantum Wells — •Georg Müller, Michael Römer, Dieter Schuh, Werner Wegscheider, Jens Hübner, and Michael Oestreich
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11:15 |
HL 1.5 |
Temperature and Concentration Dependent Spin Noise Measurements in GaAs — •Michael Römer, Georg Müller, Jens Hübner, and Michael Oestreich
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11:30 |
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15 min. break
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11:45 |
HL 1.6 |
Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM — •Thorsten Mehrtens, Marco Schowalter, Knut Müller, Andreas Rosenauer, Dongzhi Hu, and Daniel M. Schaadt
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12:00 |
HL 1.7 |
Properties of of GaAs/GaMnAs core-shell nanowires — •Elisabeth Reiger, Andreas Rudolph, Marcello Soda, Matthias Kiessling, Benedikt Bauer, Dieter Schuh, Tomasz Wojtowicz, and Werner Wegscheider
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12:15 |
HL 1.8 |
III/V surface channel devices: substrate preparation, interface passivation and growth — •Mirja Richter, Chiara Marchiori, David J. Webb, Christian Gerl, Marilyne Sousa, Christophe Rossel, Caroline Andersson, Roland Germann, Heinz Siegwart, Edward Kiewra, Yanning Sun, Joel De Souza, Devendra Sadana, Thanasis Dimoulas, and Jean Fompeyrine
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12:30 |
HL 1.9 |
Electrostatic force microscopy measurement of carbon nanotube field-effect transistors — •Imad Ibrahim, Nitesh Ranjan, Juliane Posseckardt, Michael Mertig, and Gianaurelio Cuniberti
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