Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 1: III-V semiconductors I
HL 1.4: Vortrag
Montag, 23. März 2009, 11:00–11:15, BEY 81
Intrinsic Spin Lifetimes in GaAs (110) Quantum Wells — •Georg Müller1, Michael Römer1, Dieter Schuh2, Werner Wegscheider2, Jens Hübner1, and Michael Oestreich1 — 1Institut für Festkörperphysik, Gottfried Wilhelm Leibniz Universität Hannover, Appelstr. 2, 30167 Hannover, Germany — 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
GaAs (110) quantum wells attract great attention due to the long spin lifetime for electron spins along the growth axis and are, therefore, of interest for future spin based optoelectronic devices.
At low temperatures, optical injection of a finite spin polarization yields strongly enhanced spin dephasing due to the Bir Aronov Pikus mechanism that arises from the exchange interaction between electrons and holes. Thus, the intrinsic spin lifetime in GaAs (110) quantum wells has been unknown. In this work, the non-demolition technique of spin noise spectroscopy, which only relies on statistical spin flucutations, is applied to GaAs (110) quantum wells in order to measure the intrinsic spin lifetimes. Furthermore, the Brownian motion of the electrons modifies the linewidth of the measured spin noise spectra due to time of flight broadening. This effect uniquely allows to study electronic motion at thermal equilibrium.
G. Müller, M. Römer, D. Schuh, W. Wegscheider, J. Hübner, and M. Oestreich, Phys. Rev. Lett. 101, 206601 (2008).