Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 1: III-V semiconductors I
HL 1.7: Vortrag
Montag, 23. März 2009, 12:00–12:15, BEY 81
Properties of of GaAs/GaMnAs core-shell nanowires — •Elisabeth Reiger1, Andreas Rudolph1, Marcello Soda1, Matthias Kiessling1, Benedikt Bauer1, Dieter Schuh1, Tomasz Wojtowicz2, and Werner Wegscheider1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — 2Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warszawa, Poland
Combining GaMnAs growth with nanowires would open a whole new field of spintronics application. For 2D GaMnAs/GaAs systems efficient spin injection into GaAs has been experimentally achieved. We investigate the possibilities to combine GaMnAs growth with the typical growth of nanowires. As GaMnAs has to be grown at low temperatures, it is not compatible to the typical axial growth conditions for nanowires. However, this does not apply for core-shell nanowires. Here, in a first step, GaAs core nanowires are grown using the gold catalyst technique on GaAs(111)B substrates. In a second growth step the GaMnAs shell is deposited on the side facets of the core nanowire using typical GaMnAs growth conditions as used for 2D film growth. We characterize the core-shell nanowires with scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The core nanowires show a zinc blend crystal structure with very few stacking faults. The GaMnAs shell - depending on the growth conditions - is uniformly deposited around the core or shows a very rough, 3D surface. Employing SQUID measurements we determine the Curie-Temperature and study the magnetic anisotropy of the nanowires.