|  | 09:30 | HL 27.1 | SNOM measurements of GaInN/GaN and GaN/AlGaN light emittting quantum well structures — •Peter Clodius, Holger Jönen, Lars Hoffmann, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter | 
        
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              |  | 09:45 | HL 27.2 | Time-resolved measurements on blinking dots in InGaN/GaN quantum wells — •Anne Kuhnert, Clemens Vierheilig, Tobias Meyer, and Ulrich T. Schwarz | 
        
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              |  | 10:00 | HL 27.3 | Korrelation von Raster-LBIC (Light Beam Induced Current), µ-EL und µ-PL-Spektroskopie an InGaN-MQW LEDs auf Silicon-On-Insulator (SOI)-Substrat — •T. Fey, L. Reißmann, J. Christen, A. Dadgar, A. Krost, V.K.X. Lin, S.L. Teo und S. Tripathy | 
        
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              |  | 10:15 | HL 27.4 | Electro-optical properties of InGaN-based LED structures on the sub-µm length scale — •Clemens Vierheilig, Ulrich T. Schwarz, Nikolaus Gmeinwieser, Ansgar Laubsch, and Berthold Hahn | 
        
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            |  | 10:30 |  | 15 min. break | 
        
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              |  | 10:45 | HL 27.5 | Structure and electronic properties of dislocations in GaN — •Philipp Ebert, Lena Ivanova, Svetlana Borisova, Holger Eisele, Ansger Laubsch, and Mario Dähne | 
        
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              |  | 11:00 | HL 27.6 | Sub micrometer photoluminescence fluctuations in green light emitting InGaN/GaN quantum wells — •Julia Danhof, Clemens Vierheilig, Ulrich Theodor Schwarz, Tobias Meyer, Matthias Peter, Berthold Hahn, Markus Maier, and Joachim Wagner | 
        
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              |  | 11:15 | HL 27.7 | Screening Dynamics of the Spontaneous Polarisation Field in GaInN/GaN Quantum Well Structures — •Martina Finke, Daniel Fuhrmann, Holger Jönen, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter | 
        
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              |  | 11:30 | HL 27.8 | Spatially resolved X-ray diffraction measurements on AlInN/GaN distributed Bragg reflectors — •Christoph Berger, Pascal Moser, Jürgen Bläsing, Armin Dadgar, Thomas Hempel, and Alois Krost | 
        
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            |  | 11:45 |  | 15 min. break | 
        
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              |  | 12:00 | HL 27.9 | Radiative recombination in GaInN quantum wells investigated via time-resolved photoluminescence — •Torsten Langer, Holger Jönen, Carsten Netzel, Uwe Rossow, and Andreas Hangleiter | 
        
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              |  | 12:15 | HL 27.10 | Wachstum von GaN auf hochindizierten Silizium-Substraten — •Roghaiyeh Ravash, Jürgen Bläsing, Matthias Wieneke, Armin Dadgar und Alois Krost | 
        
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              |  | 12:30 | HL 27.11 | Spectral behaviour of semipolar GaInN/GaN on {11 2 2} and {1 1 01} semipolar facets — •Michael Wiedenmann, Martin Feneberg, Rolf Sauer, Klaus Thonke, Thomas Wunderer, Stephan Schwaiger, Frank Lipski, and Ferdinand Scholz | 
        
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              |  | 12:45 | HL 27.12 | Mikroskopische Lumineszenzuntersuchungen an grün-emittierenden InGaN/GaN MQWs auf semi-polaren {1101} Facetten — •Sebastian Metzner, Frank Bertram, Jürgen Christen, Thomas Wunderer und Ferdinand Scholz | 
        
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