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10:15 |
HL 2.1 |
Development of InGaN-based thin disk lasers — •R. Debusmann, V. Hoffmann, W. John, O. Krüger, P. Vogt, M. Kneissl, and M. Weyers
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10:30 |
HL 2.2 |
Wavelength Dependence of Optical Gain and Laser Threshold in InGaN MQW Lasers — •Jessica Schlegel, Jan-Robert van Look, Veit Hoffmann, Arne Knauer, Patrick Vogt, Markus Weyers, and Michael Kneissl
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10:45 |
HL 2.3 |
Optimization of InGaN multiple quantum wells for blue lasers — •J.R. van Look, J. Schlegel, V. Hoffmann, A. Knauer, S. Einfeldt, M. Weyers, P. Vogt, and M. Kneissl
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11:00 |
HL 2.4 |
Towards InGaN-based light emitters with superior high-current performance — •Ansgar Laubsch, Matthias Sabathil, Werner Bergbauer, Martin Strassburg, Matthias Peter, Hans Lugauer, Tobias Meyer, Joachim Wagner, Norbert Linder, Klaus Streubel, and Berthold Hahn
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11:15 |
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15 min. break
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11:30 |
HL 2.5 |
Heterostructure design optimisation of deep (In)AlGaN ultraviolet light emitting diodes — •T. Sembdner, T. Kolbe, A. Knauer, V. Küller, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
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11:45 |
HL 2.6 |
Barrier alloy composition and polarization control in nitride light emitters — •Christoph Hums, Aniko Gadanecz, Armin Dadgar, Jürgen Bläsing, Alexander Franke, Thomas Hempel, Jürgen Christen, and Alois krost
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12:00 |
HL 2.7 |
Phonon-assisted contributions to the Auger losses in InGaN quantum wells — •Bernhard Pasenow, Stephan W. Koch, Jörg Hader, and Jerome V. Moloney
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