Dresden 2009 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)

O 27.23: Poster

Dienstag, 24. März 2009, 18:30–21:00, P2

Mechanical and electronic characterization of individual single-walled carbon nanotubes by scanning probe microscopy — •Martin Bohrisch, Florian Szillat, Philipp Zeigermann, Hans Kleemann, and Bernd Schröter — Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena, Deutschland

The selective growth of carbon nanotubes with particular structural and electronic properties is a prerequisite to utilize them in electronic and sensor devices. Single-walled carbon nanotubes were grown by catalyst-assisted chemical vapor deposition on insulating substrates. A horizontal alignment in predefined directions has been achieved by a growth on single-crystalline substrates like sapphire. Scanning electron microscopy is used to observe the orientation of the nanotubes. The high purity of the nanotubes is demonstrated by x-ray photoelectron and raman spectroscopy. Scanning probe techniques are utilized to determine mechanical and electronic properties of individual carbon nanotubes. The influence of the substrate-nanotube interaction on the radial deformation of single-walled carbon nanotubes was examined by contact atomic force microscopy (AFM). Electrical measurements were done by conductive AFM.