Dresden 2009 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)

O 27.7: Poster

Dienstag, 24. März 2009, 18:30–21:00, P2

Indium microsoldering of graphene on silicon dioxide substrate — •Ann-Katrin Michel¹, Viktor Geringer¹, Tim Echtermeyer², Marcus Liebmann¹, and Markus Morgenstern¹ — ¹II. Physikalisches Institut, RWTH Aachen and JARA-FIT, Otto-Blumenthal-Straße, 52074 Aachen — ²Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Straße 25, 52074 Aachen

Electron beam lithography is the standard method to produce electrical contacts for nanostructures made e.g. from graphene. A major disadvantage of this method is, apart from high costs, the contamination of the sample due to the residual photoresist. This problem gets even more severe, if scanning probe techniques are applied. Therefore, a more simple technique to make ohmic contacts to graphene without contamination is desirable and has been developed recently [1].

We reproduced this method by designing a setup for microsoldering of graphene flakes on silicon dioxide with multiple indium solder contacts. Mobility measurements on graphene samples using four point indium contacts have been used to characterize the contacts. Moreover, we describe the application to scanning tunneling microscopy (STM) of the microsoldered graphene samples.

[1] C. Ö. Girit and A. Zettl, Appl. Phys. Lett. 91, 193512 (2007)