Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.89: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Soft x-ray standing wave excited photoemission experiments on Si/MoSi2 multilayer mirrors — •Frank Schönbohm1,2, Sven Döring1,2, Daniel Weier1,2, Ulf Berges1,2, Felix Lehmkühler1,2, Charles S. Fadley3,4, and Carsten Westphal1,2 — 1Fakultät Physik - TU Dortmund, Otto-Hahn-Str. 4, 44221 Dortmund, Germany — 2DELTA - TU Dortmund, Maria-Goeppert-Mayer-Str. 2, 44227 Dortmund, Germany — 3Materials Sciences Division, LBNL, Berkeley, CA 94720, USA — 4University of California, Davis, CA 95616, USA
The structure of thin layers and the formation of interfaces is of particular interest in surface science. Element specific sample analysis can be performed by means of photoelectron spectroscopy but the method lacks of a good spatial resolution. On the other hand, reflectivity measurements show a good depth-resolution without chemical sensitivity. Thus x-ray standing wave measurements were conducted in order to combine the advantages of these methods. We used Si/MoSi2 multilayer mirrors as a sample substrate in order to increase the reflectivity. The measurements were performed at the experimental endstation at Beamline 11 at DELTA at a photon energy of hν=650 eV. The multilayer was handled in ambient air resulting in an oxidized silicon layer at the surface. This Si layer with its SiO2 cap was used as a first test system for our XSW measurements. Analysis of the recieved data indicates that the surface oxidation of the upper most Si film results in a SiO2 layer of 13 Å thickness with a non-oxidized Si-film of 15.5 Å beneath it. In order to check this result we performed hard x-ray reflectivity measurements at hν=15.2 keV for comparison at DELTA.