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P: Fachverband Plasmaphysik

P 2: Plasmatechnologie

P 2.6: Vortrag

Montag, 30. März 2009, 15:25–15:40, HS Biochemie (groß)

Reactive plasma jet high-rate etching of SiC — •Inga-Maria Eichentopf and Thomas Arnold — Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstraße 15, 04318 Leipzig

The material removal of SiC utilizing a 13.56 MHz rf-driven fluorine containing plasma jet source at atmospheric pressure has been investigated. A coaxial nozzle with a central tube for helium and CF₄ feeding the plasma and the outer ring-shaped nozzle for N₂ to shield the plasma jet from the surrounding air is used. The diameter of the inner tube of 0.5 mm allows the formation of a nearly Gaussian material removal function with 0.7 mm FWHM. Additionally an O₂ gas flow is provided and its effect on the etching rate is investigated for varied CF₄/O₂ ratios. By optimizing the ratio of CF₄ and O₂ gas flow an increase in etching rates is found. An increase of the etching rate with a decrease of O₂ content is detected. A maximum volume removal rate of 0.5 mm³/h has been found. To obtain the activation energy for the reaction of fluorine radicals with SiC on both the silicon and carbon face etching tests at elevated temperatures have been carried out. Changes in surface roughness are also investigated. Furthermore examinations concerning plasma jet-surface interactions without reactive gas have been performed. Material removal during inert gas treatment occurs, but additional deposition of SiO_x takes place.