Parts | Days | Selection | Search | Downloads | Help
A: Fachverband Atomphysik
A 18: Photoionization I
A 18.3: Fachvortrag
Wednesday, March 4, 2009, 15:00–15:30, VMP 8 R208
Demonstration of Photoionization of Highly Charged Ions by Synchrotron Radiation in an Electron Beam Ion Trap — •Martin C. Simon1, Sascha W. Epp2, Maria Schwarz1, Thomas M. Baumann1, Christian Beilmann1, Rainer Ginzel1, Renee Klawitter1, Volkhard Mäckel1, Benjamin L. Schmitt1, José R. Crespo López-Urrutia1, and Joachim Ullrich1 — 1Max-Planck Institut für Kernphysik, Heidelberg, Germany — 2Max Planck Advanced Study Group at CFEL, Hamburg, Germany
Photoionization (PI) experiments can provide deep insight into the structure of electronic systems. The study of PI of highly charged ions (HCI) is of general relevance for astrophysics, plasma physics and atomic theory. A common difficulty in PI experiments with ions is the preparation of a dense and well defined ion target, leaving HCIs inaccessible to established methods. We present a new approach using an electron beam ion trap (EBIT), capable of producing a HCI target of an area density as high as 1010 cm−2 for most HCI, an enhancement of up to four orders of magnitude in comparison with most notable merged-beam experiments. The successful demonstration was accomplished at the BESSY II synchrotron in Berlin with the transportable Heidelberg FLASH-EBIT in July 2008. Near-threshold PI of N3+ ions at the optimal photon energy range of the beamline (≈77 eV) showed high sensitivity, very good resolution. This EBIT-based method aims at higher ion charge states and will be able to prove its full potential in forthcoming experiments at higher photon energies.