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A: Fachverband Atomphysik
A 8: Atomic Clusters I
A 8.3: Talk
Tuesday, March 3, 2009, 11:30–11:45, VMP 6 HS-B
Probing optical and electronic properties of deposited metal doped silicon clusters — •Vicente Zamudio-Bayer1, Konstantin Hirsch1, Philipp Klar1, Andreas Langenberg1, Fabian Lofink1, Jürgen Probst1, Robert Richter1, Jochen Rittman1, Marlene Vogel1, Thomas Möller1, Bernd von Issendorff2, and Tobias Lau1 — 1Technische Universität Berlin, Institut für Optik und Atomare Physik, EW 3-1, Hardenbergstraße 36, D-10623 Berlin — 2Albert-Ludwigs-Universität Freiburg, Fakultät für Physik/FMF, Stefan-Meier-Straße 21, D-79104 Freiburg
Recent experiments have shown how silicon cages can be stabilized by doping them with a transition metal atom. The reactivity and electronic properties of these clusters in the gas-phase are now well known and understood and the next logical step is to deposit them to study their interaction with the surface. For this purpose we have designed a transportable experimental setup with which it will be possible to study the optical and electronic properties of deposited mass-selected clusters at our own lab and at the synchrotron source. The data on these M@Sin systems (M = 3d transition metal atom) in the gas-phase will be used as a fingerprint to test the strength of the substrate-cluster interaction. Additional investigations of the optical properties will be made possible due to the increased target density on the surface. An overview of the setup will be given and preliminary results will be presented.