Regensburg 2010 – wissenschaftliches Programm

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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 27: Poster: Organic Electronics and Photovoltaics

CPP 27.8: Poster

Mittwoch, 24. März 2010, 17:30–19:00, Poster C

Preparation and Characterisation of thin Polymeric Films to be used as Gate Dielectrics in Organic Field Effect Transistors — •Jan Hartel, Christopher Keil, and Derck Schlettwein — Institute of Applied Physics, Justus-Liebig-University Giessen, Germany. email:schlettwein@uni-giessen.de

Thin insulating polymer layers are of interest as gate dielectrics for all-organic field effect transistors (OFET). In our structures a DC resistance above 100 GΩ cm was typically reached. In this study, we performed impedance spectroscopy to characterize the dielectric properties of polymer films. A well-defined area of silver was Ar⁺-sputter-deposited onto glass. Subsequently different one-component or two-component polymer resins were deposited by spin-coating in a thickness of 6 - 100 µm. These layers were cured according to the respective technical process suggested by the supplier or optimized according to device performance. To complete the measurement structure a second silver layer of equal geometry was deposited on top of the polymer. The dielectric properties of the different films at different preparation conditions and different film thickness were characterized in this capacitor structure. The response to an AC voltage of 0.5 V in the frequency range of 100 Hz to 1 MHz was analyzed to determine the dielectric permittivity. Characteristics expected for an ideal capacitor were obtained for a number of samples and details of the Nyquist plot were compared to commercial capacitors. Samples down to the  5 µm range preserved the dielectric characteristics of bulk samples. The applicability of these films in OFET structures is discussed.