Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 13: Thermoelectric Thin Films and Nanostructures I

DS 13.3: Vortrag

Dienstag, 23. März 2010, 11:00–11:15, H8

Conductivity anisotropy of layered BiTe-SbTe-heterostructures — •Bogdan Yavorsky¹, Nicki Hinsche¹, Martin Gradhand^1,2, Peter Zahn¹, and Ingrid Mertig^1,2 — ¹Martin-Luther-Universität Halle-Wittenberg, Institut für Physik, D-06099 Halle — ²MPI für Mikrostrukturphysik, Weinberg 2, D-06120 Halle

Transport properties of ordered bismuth and antimony tellurides are studied theoretically based on first-principle electronic structure calculations using a screened Korringa-Kohn-Rostoker Greens function method. The anisotropy of the electron mobility both in the bulk materials and in layered BiTe-SbTe-heterostructures is analyzed within the relaxation time approximation of the Boltzmann theory. The influence of doping on the electrical conductivity is discussed applying the rigid band approximation.