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Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 19: Synthesis of Nanostructured Films by Self-organization I (Focused Session)

DS 19.6: Vortrag

Mittwoch, 24. März 2010, 12:00–12:15, H2

Dependence of wavelength of Xe ion-induced rippled structures on the fluence in the medium ion energy range — •Antje Hanisch1, Andreas Biermanns2, Jörg Grenzer1, and Ullrich Pietsch21Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany — 2Institute of Physics, University of Siegen, Walter Flex 3, 57078 Siegen, Germany

Ion-beam eroded self-organized nanostructures on semiconductors offer new ways for the fabrication of high density memory and optoelectronic devices. It is known that wavelength and amplitude of noble gas ion-induced rippled structures tune with the ion energy and the fluence depending on the energy range, ion type and substrate. The linear theory by Makeev [1] predicts a linear dependence of the ion energy on the wavelength for low temperatures. For Ar+ and O2+ it was observed by different groups [2] that the wavelength grows with increasing fluence after being constant up to an onset fluence and before saturation. In this coarsening regime power-law or exponential behavior of the wavelength with the fluence was monitored. So far, investigations for Xe ions on silicon surfaces mainly concentrated on energies below 1keV. We found a linear dependence of both the ion energy and the fluence on the wavelength and amplitude of rippled structures over a wide range of the Xe+ ion energy between 5 and 70keV. Moreover, we estimated the ratio of wavelength to amplitude to be constant meaning a shape stability when a threshold fluence of 2x1017cm−2 was exceeded.

[1] Makeev et al., NIM B 197, 185-227 (2002) [2] Karmakar et al., APL, 103102 (2008), Datta et al., PRB 76, 075323 (2007)

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