Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 23: High-k and Low-k Dielectrics I (Joint Session DS/DF)
DS 23.5: Vortrag
Mittwoch, 24. März 2010, 10:30–10:45, H8
Nanoscale analysis of the electric properties of ultra thin ZrO2-, (ZrO2)x(Al2O3)1−x- and ZrO2/Al2O3/ZrO2-films. — •Dominik Martin1, Matthias Grube1, Elke Erben1, Wenke Weinreich2, Uwe Schröder1, Lutz Geelhaar3, Walter Weber1, Henning Riechert3, and Thomas Mikolajick1 — 1namlab Gmbh, D-01187 Dresden — 2Fraunhofer-CNT, D-01099 Dresden — 3Paul-Drude-Institut für Festkörperelektronik, D-10117 Berlin
In order to achieve an high k-value in sub 10 nm thin films of ZrO2 it is necessary to reach the tetragonal crystalline phase. This is done by either depositing the layer at higher temperatures or by a post deposition annealing step. Both however induce high leakage current through the layer. Small amounts of Al2O3 can be incorporated in ZrO2 to reduce leakage current. In order to understand the detailed charge carrier transport mechanisms, thickness series of ultra thin ZrO2-, (ZrO2)x(Al2O3)1−x- and ZrO2/Al2O3/ZrO2-films were deposited by Atomic Layer Deposition and subjected to different rapid thermal annealing processes. These layers were examined by I-V-, C-V-Spectroscopy and conductive atomic force microscopy. It is shown that Al incorporation throughout the entire layer imposes the relatively low k value of Al2O3 onto the entire layer. Whereas incorporation of only to cycles of Al into the center of the ZrO2 effectively reduces leakage currents while maintaining a higher k value.
This document was translated from LATEX by HEVEA.