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Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Organic Electronics and Photovoltaics I (Joint Session DS/CPP/HL/O)

DS 3.9: Vortrag

Montag, 22. März 2010, 12:15–12:30, H8

Experimental study and time dependent modeling of OFETs with solid electrolyte gate dielectrics — •Katharina Schätzler1, Klaus Schmidt1, Walter Fix1, Gottfried Döhler1, and Heiko Weber21PolyIC GmbH & Co. KG, Fürth — 2Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität, Erlangen

We successfully investigated and simulated organic field effect transistors (OFETs) with a solid organic insulator containing ionic salt. It is already well known that electrolytes as gate dielectrics in OFETs offer low operating voltages by means of a high capacitance. Hence, the charge carrier density is increased in the channel region of the semiconductor. However, the drain-source current Ids shows a strong time dependency because of the limited mobility of the ions. Consequently we developed a time dependent model for the spatial distribution of the ionic current within the insulator matrix. The ionic current of both cations and anions splits in a diffusion and a drift process. The model very precisely reproduces the time as well as the ion concentration dependency of Ids. Parameters like ion and semiconductor mobility are extracted and are in good agreement with parameters extracted from experimental OFET and capacitance characteristics.

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