Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...) I
DS 36.1: Vortrag
Donnerstag, 25. März 2010, 09:30–09:45, H8
GD OES analysis of thin film samples with application of pulsed discharge. — •Varvara Efimova1, Volker Hoffmann1, and Jürgen Eckert1,2 — 1IFW Dresden, Institut für Komplexe Materialen, Helmholtzstraße 20, 01069 Dresden, Germany — 2TU Dresden, Institut für Werkstoffwissenschaft, D-01062, Dresden, Germany
The application of a pulsed power supply of glow discharge (GD) in optical emission spectrometry (OES) has a number of advantages in comparison with the continuous one [1]. Because of the slower sputtering and less heating of the sample, pulsed discharge is preferable for the analysis of thin layers and heat-sensitive samples.
However, the use of pulsed GD (PGD) in commercial spectrometers has still some limitations. Firstly, the influence of PGD parameters on the analytical performance is not yet enough investigated. Secondly, it is difficult to quantify the profiles measured with PGD, because the existing quantification model is established for the continuous discharge.
In the present work the methodic of the optimization of PGD parameters has been developed. According to the studies carried out, the measurement of depth profiles of thermally fragile and thin layered samples with pulsed radio frequency GD OES has been optimized. To some of the measured depth profiles a quantification procedure has been applied. The results of the quantification have shown that the existing quantification model is valid also for the pulsed discharge, if the measurement is performed under the same conditions as the calibration.
[1] W.W. Harrison, J. Anal. At. Spectrom., 13, 1051 (1998).