Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Layer Properties: Electrical, Optical and Mechanical Properties
DS 38.6: Vortrag
Donnerstag, 25. März 2010, 15:15–15:30, H8
Electrical properties of magnetron sputtered ZnO:Al samples determined by Hall and Seebeck measurements — •Wilma Dewald1, Volker Sittinger1, Bernd Szyszka1, Mark Wimmer2, and Florian Ruske2 — 1Fraunhofer Institute for Surface Engineering and Thin Films (IST), Bienroder Weg 54E, 38108 Braunschweig, Germany — 2Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), Kekuléstraße 5, 12489 Berlin, Germany
Transparent conductive oxides (TCOs) play a big role in display and photovoltaic technology. One of the most promising materials for photovoltaic applications is aluminum doped zinc oxide. The electrical properties of differently prepared ZnO:Al films will be analyzed in this paper.
Carrier mobility and free carrier density are varying in a wide range depending on the preparation method and doping level. Reactive mid frequency magnetron sputtering of a metallic Zn:Al target, radio frequency and direct current magnetron sputtering of a ceramic ZnO:Al2O3 target are considered as well as the post deposition annealing of samples, which increases mobility significantly. The carrier mobility in polycrystalline aluminum doped ZnO is limited by scattering at grain boundaries and at ionized impurities. With Hall and Seebeck measurements insight will be given in transport and scatter mechanisms for the different samples.