Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 5: Nanoengineered Thin Films
DS 5.6: Vortrag
Montag, 22. März 2010, 17:00–17:15, H8
High Temperature Interface Superconductivity — •Gennady Logvenov1,2, Ivan Bozovic2, and Adrian Gozar2 — 1Max-Planck-Institute for Solid State Research, Heisenbergstr.1, D-70569, Stuttgart — 2Brookhaven National Laboratory, Upton, NY 11973,USA
Using atomic-layer molecular beam epitaxy we synthesize cuprate bilayers which show interface superconductivity. The superconducting critical temperature (Tc) in the bilayers structures depends on the deposition sequence: Tc = 15 K in insulator-metal bilayers, while Tc = 36 K in metal-insulator hetero-structures. In this talk I will present a comprehensive study of the high-temperature interface superconductivity, including transport measurements, crystal structure determination, and quantitative evaluation of Sr-La intermixing and of redistribution of mobile carriers across the interface. By a new technique, delta-doping tomography using isovalent Zn markers, we have demonstrated that in these heterostructures high-Tc superconductivity occurs within a single CuO2 plane.