Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 8: [MA] Multiferroics II (Joint Session of MA/DF/KR/DS)
DS 8.5: Vortrag
Montag, 22. März 2010, 15:00–15:15, H3
Electric field induced magnetization switching in strained EuO — •Marjana Ležaić, Konstantin Rushchanskii, Frank Freimuth, and Stefan Blügel — Institut für Festkörperforschung and Institute for Advanced Simulation, Forschungszentrum Jülich, 52425 Jülich, Germany
EuO is one of the rare materials combining a semiconducting gap and ferromagnetic ordering. Due to this property, EuO was suggested as a spin-filter in magnetic tunnel junctions [1]. It was shown that its ordering temperature TC of 69 K can be increased further by doping with Gd [2], or by a reduction of the lattice parameter [3]. Recently, it has also been shown that a spin-polarized 2-dimensional electron gas can be formed at the EuO/LaAlO3 interface [4]. The list of properties that are not only interesting from the point of view of basic research, but also indicate possible applications, does not end here. A newly discovered property, ferroelectricity in strained EuO [5] puts this material into the class of multiferroics with relatively high TC. Employing ab-initio calculations, we demonstrate how the ferroelectric property can be exploited in EuO films under tensile strain in order to achieve electric control of the magnetization direction.
[1] T. Santos and J. S. Moodera, Phys. Rev. B 69, 241203 (2004).
[2] R. Sutarto, et al, Phys. Rev. B 80, 085308 (2009).
[3] N. J. C. Ingle and I. S. Elfimov, Phys. Rev. B 77, 121202(R) (2008).
[4] Y. Wang, et al, Phys. Rev. B 79, 212408 (2009).
[5] E. Bousquet, N. A. Spaldin, Ph. Ghosez, arXiv:0906.4235v1.
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