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DPG

Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.5: Poster

Montag, 22. März 2010, 15:00–17:30, Poster D1

Inkjet printed organic layers on planar and microstructured flexible substrates for organic thin film devices — •Peter Lewer1, Kerstin Schulze1, Silvia Janietz1, Felix Stelzl2, Chegnui Bekeny2, and Uli Würfel21Fraunhofer-Institute for Applied Polymer Research (IAP), Geiselbergstr. 69, 14476 Potsdam, Germany — 2Fraunhofer-Institute for Solar Energy Systems (ISE), Heidenhofstr. 2, 79110 Freiburg, Germany

Inkjet printing of functional organic materials as deposition method holds the advantage for high throughput and low-cost production of organic electronic devices on flexible substrates in the future such as organic field effect transistors (OFETs) or organic solar cells (OSCs) [1,2]. In this context a three-dimensional electrode structure on a flexible substrate can be used for special application such as high voltage supply [3]. Therefore we investigate the inkjet printing process on these micro- or nanostructured PMMA-foils. The printing process was especially influenced by the capillary forces of the electrode structures. Here we show our results of the inkjet printing of semiconducting layers consisting of poly(3-hexylthiophene) (P3HT) in these three-dimensional structures. The preparation was done under ambient conditions and resulted in smooth layers as analysed with atomic force microscopy (AFM) and transmission electron microscopy (TEM).

[1] H. Sirringhaus, T. Kawase, R.H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E.P. Woo, Science 2000, 290, 2123. [2] P. Calvert, Chemistry of Materials 2001, 13, 3299. [3] M. Niggemann, W. Graf, und A. Gombert, Advanced Materials 2008, 20, 4055.

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