Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers
DS 9.51: Poster
Montag, 22. März 2010, 15:00–17:30, Poster D1
Properties of thin films and bulk of Pb1−xSn1+xX2 (X=S, Se) mixed crystals — •Vera Lazenka1, Klaus Bente1, and Valery Gremenok2 — 1Institut für Mineralogie, Kristallographie und Materialwissenschaft, Universität Leipzig, Scharnhorststr. 20, 04275 Leipzig, Germany — 2State Scientific and Production Association "Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus", P. Brovka str., 19, 220072 Minsk, Belarus
Mixed crystals of the galena-herzenbergite-system implying intermediate PbSnS2 are perspective for thermoelectric, photovoltaic etc. materials. In addition to the Pb-Sn-substitution the replacement of S by Se and Te is studied, taking in account that thermoelectrical properties of e.g. PbX are improved by the substitution of S for Se and Te. The work aims to investigate the effect of anionic and metal atom substitutions in SnX - PbSnX2 on structure and optical and electrical properties. For target synthesis Sn, Pb, S and Se (99.998 %) were reacted in vacuum-sealed quartz ampoules. Because of the thermoelectrical properties improvement caused by metal impurities in galena, also natural PbS is used. Thin films were prepared from powder material by hot wall evaporation method at 7*10−6 mbar on glass substrates at 200-350 ∘C. Pb1−xSn1+xX2 (X=S, Se) characterized by XRD and EPMA and effects of Pb-Sn and S-Se ratios on the thermopower are presented.