Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 11: Transport
HL 11.13: Vortrag
Montag, 22. März 2010, 17:15–17:30, H14
Activation of acceptor levels in Mn implanted Si by pulsed laser annealing — •Lin Li1,2, Shengqiang Zhou2, Danilo Bürger2, Peter Oesterlin3, Jürgen Fassbender2, Manfred Helm2, Shude Yao1, and Heidemarie Schmidt2 — 1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China — 2Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden- Rossendorf e.V., Bautzner Landstraße 128, 01328 Dresden, Germany — 3INNOVAVENT GmbH, Bertha-von-Suttner-Str. 5, 37085 Göttingen, Germany
Nearly intrinsic Si wafers were implanted with Mn ions. The implanted Si films were annealed by pulsed laser annealing (PLA) or rapid thermal annealing (RTA). Activation of acceptors was only realized in the PLA films with a free hole concentration of 4*1017 cm-3, compared to the activation of donors in RTA films with a free electron concentration of 6*1015 cm-3. The PLA films reveal negative magnetoresistance with MR= 0.5% at 20 K and 30 K and at 7 T, hinting towards spin polarization of holes. Ferromagnetism was probed for both RTA and PLA films by a SQUID magnetometer at low temperatures. The formation of ferromagnetic MnSi1.7 nanoparticles has been proven in RTA films by synchrotron radiation X-ray (SR-XRD) measurements [1] and could be excluded in Mn implanted Si annealed by PLA.