Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Quantum Dots and Wires: Preparation and Characterization I
HL 13.11: Vortrag
Montag, 22. März 2010, 16:45–17:00, H17
Position control of self-catalyzed MBE-grown GaAs nanowires — •Benedikt Bauer1, Andreas Rudolph1, Anna Fontcuberta i Morral2, Dieter Weiß1, Dieter Schuh1, Marcello Soda1, Josef Zweck1, and Elisabeth Reiger1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany — 2Institut des Materiaux, EPFL Lausanne, Switzerland
Nanowires grown in bottom-up processes are regarded as possible building blocks of future electronic devices. For integrating them into conventional electronic circuits controlling the position and diameter of the nanowires is inevitable [1]. We report on position controlled GaAs nanowires grown via self-catalyzed growth using MBE [2]. Starting with a GaAs (111)B substrate covered by a thin SiO2 layer we use E-beam lithography in combination with wet chemical etching to define arrays of holes with diameters of 100 nm and varying interhole distances between 200 and 2000 nm. These holes in the SiO2 layer act as nucleation sites for nanowire growth. The nanowires are oriented in the [111] direction and are restricted to the patterned areas.
SEM/TEM characterizations show that the nanowires have a hexagonal shape with {110} side facets and zinc blende as dominant crystal structure.
[1] Thelander et al., Mater. Today 9 (2006) 28.
[2] Colombo et al., Phys. Rev. B 77 (2008) 15532.