Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Quantum Dots and Wires: Preparation and Characterization I
HL 13.8: Vortrag
Montag, 22. März 2010, 16:00–16:15, H17
Structural and optical characterization of high areal density GaxIn1−xP quantum dots on GaP — •Vasilij Baumann, Sven Gerhard, Sven Höfling, and Alfred Forchel — Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
We present a study of growth, morphology and optical properties of GaxIn1−xP quantum dots (QDs) for various Ga concentrations x.
All samples were grown on GaP substrates using a gas source molecular beam epitaxy system with thermally cracked PH3 gas and Ga and In from solid source effusion cells.
QD areal densities up to 1011 cm−2 have been achieved showing strong dependence on the amount of gallium supplied. QD sizes and areal densities are evaluated using scanning electron microscopy and atomic force microscopy and are related to photoluminescence (PL) properties of the QDs.
Low temperature PL spectra are also presented showing emission in the visible red spectral range and emission intensities that are strongly dependent on Ga content.
Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.