Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 14: Nanophotonics - Devices II (Focused Session with DS)
HL 14.2: Topical Talk
Montag, 22. März 2010, 14:30–15:00, H2
High-brightness edge-emitting semiconductor lasers based on concepts of photonic band crystal and titled wave lasers — •Vladimir Kalosha, Thorsten Kettler, Kristian Posilovic, Daniel Seidlitz, Vitaly Shchukin, Nikolay Ledentsov, and Dieter Bimberg — Institute for Solid-State Physics, Technical University Berlin, Berlin, Germany
We will report on current status of the design, fabrication and performance of edge-emitting waveguide lasers and their arrays which are based on concepts of photonic band crystal (PBC) lasers and tilted wave lasers (TWL). Such lasers provide high radiation power and low beam divergence and present potentially a new elementary basis for high-brightness laser systems. Following to PBC concept, the laser is formed by multiple quasi-periodic AlGaAs layers and varying height and width of multiple stripes. As compared to typical lasers, they are characterized by an extremely large mode area and provide discrimination of high-order modes. Experimentally we have obtained a brightness of 8.7×107 W/cm2/sr in pulsed regime and vertical and lateral beam quality factor M2 < 2 for large range of the pump current in pulsed and cw regimes at 980 nm. Maximum power of 3.5, 10.5 and 27 W was achieved for one, three-and nine-stripe lasers, scalable with the number of stripes. Following to the TWL concept, the laser is formed by coupled narrow and broad waveguides and give rise in ultra-narrow tilted beam from the broad waveguide at proper phase-matching. Experiments have demonstrated far-field divergence of TWLs well below 1∘ and improved wavelength stability in wide pumping ranges.
This document was translated from LATEX by HEVEA.