Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Spin-controlled Transport I
HL 19.7: Vortrag
Dienstag, 23. März 2010, 11:15–11:30, H14
The Rashba Effect in the Magnetization of an Asymmetric InGaAs/InP Quantum Well — •Benedikt Rupprecht1, Christian Heyn2, Hilde Hardtdegen3, Thomas Schäpers3, Marc A. Wilde1, and Dirk Grundler1 — 1Lehrstuhl für Physik funktionaler Schichtsysteme, Physik Department, Technische Universität München, James-Franck-Strasse 1, D-85747 Garching b. München — 2Institut für Angewandte Physik, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg — 3Institute for Bio- and Nanosystems (IBN-1) and JARA Jülich-Aachen Research Alliance, Research Centre Jülich GmbH, D-52425 Jülich
The measurement of the magnetic susceptibility was proposed by
Bychkov and Rashba in 1984 to observe the spin splitting induced by the spin-orbit interaction (SOI) in a two-dimensional electron system (2DES).
The detection of the corresponding beatings in the magnetization M is experimentally challenging. Magnetization data obtained on a high mobility 2DES in an AlGaAs/GaAs heterostructure revealed these beatings in M only at high tilt angles δ between the sample normal and the external field B.
By using micromechanical cantilever magnetometry we were able recently to measure the magnetization of an asymmetric InGaAs/InP quantum well showing SOI induced beating patterns in M at small δ. From the data we extract the bandstructure parameters effective mass m*, Landé g-factor g* and Rashba parameter αR. The work was supported via SPP 1285 "Halbleiter-Spintronik" (GR1640/3) and the German Excellence Cluster "Nanosystems Initiative Munich" (NIM).