Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 2: Devices I

HL 2.3: Talk

Monday, March 22, 2010, 10:45–11:00, H13

SOD as self-acting passivation for lateral TFETs — •Carolin Axt, Helmut Lochner, Marc Dressler, Ronny Schindler, Josef Biba, Rudolf Nüssl, Torsten Sulima, and Walter Hansch — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

According to the ITRS (International Technology Roadmap for Semiconductors)the TFET is a promising successor of the MOSFET. The major problems of current MOSFETs are caused by short channel effects, which results in high OFF-currents. The TFET reverses these unfavorable tunnel currents into useful trait. To investigate new device concepts lateral TFETs were fabricated. Because TFET action is closely connected with extremely high-doped surface layer for source/drain, we used Spin-On-Dopand (SOD) technics. In the common process flow, the SOD-layer has to be removed difficult without affecting the gate oxide. In a changed technological process sequence we used the SOD layer as isolation instead of removing it. The loss of solvent caused by thermodiffusion might result in cracks within the SOD-layer. Metal can enter these cracks while depositing and structuring the contacts. As a result, a short circuit between source or drain and gate are caused. Therefore, photo-resist was implemented to serves as an additional passivation, which ensures a plenary insulation of the doped areas. The results of these transistors with a combined SOD-resist passivation were compared with other lateral TFETs by electrical characterization. Input and output characteristics as well as SIMS measurements and REM graphics are shown.