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DPG

Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 2: Devices I

Montag, 22. März 2010, 10:15–11:15, H13

10:15 HL 2.1 Improvement of TFET perfomance by spacer technology — •Marc Dressler, Helmut Lochner, Carolin Axt, Ronny Schindler, Josef Biba, Oliver Hammer, Florian Palitschka, Dorota Kulaga-Egger, Rudolf Nüssl, Tanja Stimpel-Lindner, Torsten Sulima, and Walter Hansch
10:30 HL 2.2 Advanced device performance of TFETs by embedded silicon germanium alloys — •Helmut Lochner, Peter Iskra, Martin Schlosser, Dorota Kulaga-Egger, Torsten Sulima, and Walter Hansch
10:45 HL 2.3 SOD as self-acting passivation for lateral TFETs — •Carolin Axt, Helmut Lochner, Marc Dressler, Ronny Schindler, Josef Biba, Rudolf Nüssl, Torsten Sulima, and Walter Hansch
11:00 HL 2.4 Properties of an interface layer created by Boron-SOD diffusion — •Ronny Schindler, Josef Biba, Marc Dreßler, Carolin Axt, Helmut Lochner, Dorota Kułaga-Egger, Tanja Stimpel-Lindner, Florian Palitschka, Oliver Hammer, Torsten Sulima, and Walter Hansch
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DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg