Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster I: Devices, Quantum Dots and Quantum Wires
HL 31.13: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D1
Electrical characterization of metal contacts on p-doped Galliumnitride nanowires — •Jörg Kinzel1, Ahsan Nawaz1, Jens Ebbecke2, Raffaella Calarco3, Toma Stoica3, Hubert Krenner1, and Achim Wixforth1,4 — 1Lehrstuhl für Experimentalphysik 1, Universität Augsburg, Germany — 2NanoSYD - Mads Clausen Institute, University of Southern Denmark, Sønderborg, Denmark — 3Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH, Germany — 4Center for NanoScience, Ludwig-Maximilians-Universität, München, Germany
GaN nanowires as a Group III-nitride semiconductor offer an interesting potential for optoelectronics and nano-electronics devices running at ambient temperatures.
We report on recent investigations on the realization of electric contacts on p-doped GaN nanowires. After growth of the NW by molecular beam epitaxy with in situ Magnesium doping we define individual metal source-drain electrodes by electron-beam lithography. We study the characteristics of different metal contact material combinations. The fabricated contacts and the influence of rapid thermal annealing steps are characterized by IV-measurements at room temperature. We find that Ti/Au contacts commonly used for n-type GaN exhibit poor contact properties in contrast to combinations using Ag or Pd to contact the wire.