Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 31: Poster I: Devices, Quantum Dots and Quantum Wires

HL 31.17: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Selective area growth of InAs nanowires by molecular beam epitaxy — •Christian Blömers, Mihail Ion Lepsa, Thomas Grap, Thomas Schäpers, Hans Lüth, and Detlev Grützmacher — Institute of Bio- and Nanosystems (IBN-1) and JARA - Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, D-52425 Jülich

We report on the growth of InAs nanowires by selective area molecular beam epitaxy. Semiconductor nanowires are interesting for future nanoscale devices and furthermore provide an easy way to study quantum effects in one dimensional structures. InAs is particularly attractive because of its low direct band gap, low effective mass and high mobility making it suitable for electronic (charge and spin related) and optoelectronic applications. A critical issue for the fabrication of nanowire devices is the ability to control the position of the grown wires on the substrate. For this purpose, we have used a SiO_x (Hydrogen silsesquioxane, HSQ) mask with hole patterns. The nucleation of the nanowires takes place in the holes, leading to selectively grown nanowire arrays. Other methods use arrayed metal particles (e.g. Au) which catalyze the growth of the wires. In contrast, our method has the advantage that the wires are of high purity and without contamination of metal atoms. We show results obtained for different growth conditions (varying substrate temperature, beam-fluxes of In and As), different substrates (InP and GaAs) and different preparation methods of the holes in the HSQ.