Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster I: Devices, Quantum Dots and Quantum Wires
HL 31.18: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D1
Fabrication and electrical characterization of silicon nanowires synthesized via electroless etching method — •Guodong Yuan1, Saskia F. fischer1, Dennis König2, and Alfred Ludwig2 — 1Fakultät für Elektrotechnik und Informationstechnik, Ruhr-Universität Bochum, Bochum — 2Fakultät für Maschinenbau, Ruhr-Universität Bochum, Bochum
Silicon nanowires have attracted much attention recently due to their potential applications in future nanoelectronic devices and integrated nanosystems. A facile electroless etching method has been demonstrated for preparing large-area single crystalline silicon nanowire arrays[1]. This novel approach for silicon nanowires is fascinating with respect to the traditional chemical vapour deposition (CVD) method with vapour-liquid-solid (VLS) mechanism, which always needs high temperature, hazardous precursors, expensive source materials and complex vacuum furnace systems. With the catalysis of metallic Ag particle covering on the surfaces of silicon wafer, electroless etching was conducted in aqueous solution of HF and H2O2 at room temperature. The as-synthesized silicon nanowire arrays have an epitaxially single crystal structures, a diameter distribution of 50-300nm and controllable length up to 50µm. Electrical transport properties on single silicon nanowire are intestigated. [1] K. Q. Peng, et al, Angew. Chem., Int. Ed. 2005, 44, 2737.